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| Hall Sensor KSY 10 Version 2.0 Features * * * * * High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance * Plastic-encapsulated miniature package Typical Applications * Detection of speed * Detection of position * Detection of diaphragm position in pressure pickup cans * Magnetic field measurement at permanent magnets * Magnetic field measurement at magnetic yokes for current determination * Magnetic field measurement in dc motors for contactless commutation Dimensions in mm Type s Ordering Code Q62705-K38 KSY 10 s not for new design The position sensor KSY 10 is an ion-implanted Hall generator made of mono-crystalline GaAs material. It is enclosed in a tubular plastic package with four tags. When operating the sensor with a constant supply current, the output Hall voltage is directly proportional to the magnetic field acting upon the sensor. This sensor is outstanding for its high inductive sensitivity and very low temperature coefficient. Data Sheet 1 1999-04-01 KSY 10 The Hall sensor's active area is approx. 0.2 mm x 0.2 mm. It is placed approx. 0.35 mm below the plastic surface of the front side and is concentric towards the adjusting marking on the rear. The chip carrier is non-magnetic. The position sensor KSY 10 is particularly suitable for sensing the position of magnets and of softmagnetic material, resp., if the sensor itself is mounted on a magnet. Absolute Maximum Ratings Parameter Operating temperature Storage temperature Supply current Thermal conductivity1) Electrical Characteristics (TA = 25 C) Nominal supply current Open-circuit sensitivity Open-circuit Hall voltage Symbol Limit Values - 40 / + 150 - 50 / + 160 7 2.8 Unit C C mA mW/K TA Tstg I1 Gth A I1N KB0 V20 VR0 FL 5 170...230 85...130 25 mA V/AT mV mV I1 = I1N, B = 0.1 T Ohmic offset voltage2) I1 = I1N, B = 0 T Linearity of Hall voltage B = 0...0.5 T B = 0...1 T Supply and Hall-side internal resistance B=0 T Temperature coefficient of the open-circuit Hall voltage I1 = I1N, B = 0.2 T Temperature coefficient of the internal resistance B = 0.2 T 0.2 0.7 900...1200 approx. -0.05 % % %/K R10, 20 TCV20 TCR10, R20 0.1 ... 0.18 %/K 1) 2) Thermal conductivity chip-ambient when soldered, in still air Offset voltage selection upon request Data Sheet 2 1999-04-01 KSY 10 Open-circuit sensitivity KB0 versus temperature referred to KB0 at TA = 25 C Internal resistance R20 versus temperature referred to R20 at TA = 25 C, Parameter: Flux density B Internal resistance R20 versus magnetic field referred to R20 at B = 0 T and TA = 25 C Max. permissible supply current I1 versus temperature TA Data Sheet 3 1999-04-01 |
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